1SS405,H3F

Toshiba

Diode Silicon Epitaxial Schottky Barrier Type

RoHSCompliant

Manufacturer: Toshiba
Mounting style: Surface Mount
Packaging: Tape & Reel
Schedule B: 8541100070
Forward Current: 50mA
Forward Voltage: 500mV
Peak Reverse Current: 500nA
Element Configuration: Single
Max Power Dissipation: 150mW
Max Reverse Voltage (DC): 20V
Average Rectified Current: 50mA
Max Operating Temperature: 125°C
Min Operating Temperature: -55°C
Max Forward Surge Current (Ifsm): 1A
Peak Non Repetitive Surge Current: 1A
Max Repetitive Reverse Voltage (Vrrm): 25V