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2SA1162-GR,LF

Toshiba · TO-236

50V 150mW 150mA 70@2mA,6V 80MHz 100mV@100mA,10mA PNP +125¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS

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RoHSCompliant
Manufacturer
Toshiba
Categories
Semiconductors · Discrete Semiconductors · Transistors · BJTs
Package / case
TO-236
Mounting style
Surface Mount
Packaging
Tape & Reel
Weight
7.994566mg
HFE Min
70
Polarity
PNP
Schedule B
8541210080
Transition Frequency
80MHz
Element Configuration
Single
Max Breakdown Voltage
50V
Max Collector Current
150mA
Max Power Dissipation
150mW
Gain Bandwidth Product
80MHz
Max Operating Temperature
125°C
Show 6 more specifications
Min Operating Temperature
-55°C
Emitter Base Voltage (VEBO)
5V
Collector Base Voltage (VCBO)
50V
Collector Emitter Voltage (VCEO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
100mV

Common questions about 2SA1162-GR,LF

What is 2SA1162-GR,LF?
2SA1162-GR,LF is 50V 150mW 150mA 70@2mA,6V 80MHz 100mV@100mA,10mA PNP +125¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS, manufactured by Toshiba.
Who manufactures 2SA1162-GR,LF?
2SA1162-GR,LF is manufactured by Toshiba.
What package does 2SA1162-GR,LF come in?
2SA1162-GR,LF comes in a TO-236 package (Surface Mount).
Is 2SA1162-GR,LF RoHS compliant?
The RoHS status of 2SA1162-GR,LF is: Compliant.
Where can I buy 2SA1162-GR,LF?
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