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2SA1312GRTE85LF
Toshiba · TO-236
TRANSISTOR SILICON PNP EPITAXIAL TYPE
RoHSCompliant
- Manufacturer
- Toshiba
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Package / case
- TO-236
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- HFE Min
- 200
- Polarity
- PNP
- Lead Free
- Lead Free
- Number of Pins
- 3
- Radiation Hardening
- No
- Transition Frequency
- 100MHz
- Element Configuration
- Single
- Max Breakdown Voltage
- 120V
- Max Collector Current
- 100mA
- Max Power Dissipation
- 150mW
- Gain Bandwidth Product
- 100MHz
Show 4 more specificationsShow fewer specifications
- Emitter Base Voltage (VEBO)
- -5V
- Collector Base Voltage (VCBO)
- -120V
- Collector Emitter Voltage (VCEO)
- 300mV
- Collector Emitter Breakdown Voltage
- 120V
Common questions about 2SA1312GRTE85LF
- What is 2SA1312GRTE85LF?
- 2SA1312GRTE85LF is TRANSISTOR SILICON PNP EPITAXIAL TYPE, manufactured by Toshiba.
- Who manufactures 2SA1312GRTE85LF?
- 2SA1312GRTE85LF is manufactured by Toshiba.
- What package does 2SA1312GRTE85LF come in?
- 2SA1312GRTE85LF comes in a TO-236 package (Surface Mount).
- Is 2SA1312GRTE85LF RoHS compliant?
- The RoHS status of 2SA1312GRTE85LF is: Compliant.
- Where can I buy 2SA1312GRTE85LF?
- Send an RFQ to Makat and our AI agents source 2SA1312GRTE85LF across the whole supplier network, with verified offers inside 48 hours.