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2SA1313-Y(TE85L,F)
Toshiba · SOT-23
Transistor for low frequency small-signal amplification
RoHSCompliant
- Manufacturer
- Toshiba
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Package / case
- SOT-23
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Polarity
- PNP
- Frequency
- 200MHz
- Number of Pins
- 3
- Power Dissipation
- 200mW
- Number of Elements
- 1
- Radiation Hardening
- No
- Transition Frequency
- 200MHz
- Element Configuration
- Single
- Max Breakdown Voltage
- 50V
- Max Collector Current
- 500mA
- Max Power Dissipation
- 200mW
Show 7 more specificationsShow fewer specifications
- Gain Bandwidth Product
- 200MHz
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Emitter Base Voltage (VEBO)
- 5V
- Collector Base Voltage (VCBO)
- 50V
- Collector Emitter Voltage (VCEO)
- 50V
- Collector Emitter Breakdown Voltage
- 50V
Common questions about 2SA1313-Y(TE85L,F)
- What is 2SA1313-Y(TE85L,F)?
- 2SA1313-Y(TE85L,F) is Transistor for low frequency small-signal amplification, manufactured by Toshiba.
- Who manufactures 2SA1313-Y(TE85L,F)?
- 2SA1313-Y(TE85L,F) is manufactured by Toshiba.
- What package does 2SA1313-Y(TE85L,F) come in?
- 2SA1313-Y(TE85L,F) comes in a SOT-23 package (Surface Mount).
- Is 2SA1313-Y(TE85L,F) RoHS compliant?
- The RoHS status of 2SA1313-Y(TE85L,F) is: Compliant.
- Where can I buy 2SA1313-Y(TE85L,F)?
- Send an RFQ to Makat and our AI agents source 2SA1313-Y(TE85L,F) across the whole supplier network, with verified offers inside 48 hours.