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2SA2120-O(Q)
Toshiba
Trans GP BJT PNP 200V 12A 200000mW 3-Pin(3+Tab) TO-3PN Sack
RoHSCompliant
- Manufacturer
- Toshiba
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Mounting style
- Through Hole
- Packaging
- Bulk
- Polarity
- PNP
- Lead Free
- Lead Free
- Number of Pins
- 3
- Radiation Hardening
- No
- Transition Frequency
- 25MHz
- Element Configuration
- Single
- Max Collector Current
- 12A
- Max Power Dissipation
- 200W
- Gain Bandwidth Product
- 25MHz
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Emitter Base Voltage (VEBO)
- 5V
Show 3 more specificationsShow fewer specifications
- Collector Base Voltage (VCBO)
- 200V
- Collector Emitter Voltage (VCEO)
- 200V
- Collector Emitter Breakdown Voltage
- 200V
Common questions about 2SA2120-O(Q)
- What is 2SA2120-O(Q)?
- 2SA2120-O(Q) is Trans GP BJT PNP 200V 12A 200000mW 3-Pin(3+Tab) TO-3PN Sack, manufactured by Toshiba.
- Who manufactures 2SA2120-O(Q)?
- 2SA2120-O(Q) is manufactured by Toshiba.
- Is 2SA2120-O(Q) RoHS compliant?
- The RoHS status of 2SA2120-O(Q) is: Compliant.
- Where can I buy 2SA2120-O(Q)?
- Send an RFQ to Makat and our AI agents source 2SA2120-O(Q) across the whole supplier network, with verified offers inside 48 hours.