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2SC2713-BL(TE85L,F
Toshiba · TO-236
Power transistor for high-speed switching applications
RoHSCompliant
- Manufacturer
- Toshiba
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Package / case
- TO-236
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- HFE Min
- 200
- Polarity
- NPN
- Frequency
- 100MHz
- Number of Pins
- 3
- Power Dissipation
- 150mW
- Number of Elements
- 1
- Radiation Hardening
- No
- Transition Frequency
- 100MHz
- Element Configuration
- Single
- Max Breakdown Voltage
- 120V
- Max Collector Current
- 100mA
Show 9 more specificationsShow fewer specifications
- Max Power Dissipation
- 150mW
- Gain Bandwidth Product
- 100MHz
- Max Operating Temperature
- 125°C
- Min Operating Temperature
- -55°C
- Emitter Base Voltage (VEBO)
- 5V
- Collector Base Voltage (VCBO)
- 120V
- Collector Emitter Voltage (VCEO)
- 120V
- Collector Emitter Breakdown Voltage
- 120V
- Collector Emitter Saturation Voltage
- 300mV
Common questions about 2SC2713-BL(TE85L,F
- What is 2SC2713-BL(TE85L,F?
- 2SC2713-BL(TE85L,F is Power transistor for high-speed switching applications, manufactured by Toshiba.
- Who manufactures 2SC2713-BL(TE85L,F?
- 2SC2713-BL(TE85L,F is manufactured by Toshiba.
- What package does 2SC2713-BL(TE85L,F come in?
- 2SC2713-BL(TE85L,F comes in a TO-236 package (Surface Mount).
- Is 2SC2713-BL(TE85L,F RoHS compliant?
- The RoHS status of 2SC2713-BL(TE85L,F is: Compliant.
- Where can I buy 2SC2713-BL(TE85L,F?
- Send an RFQ to Makat and our AI agents source 2SC2713-BL(TE85L,F across the whole supplier network, with verified offers inside 48 hours.