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Catalog

2SK3799(Q,M)

Toshiba · TO-220

MOSFET N-CH 900V 8A TO220SIS

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RoHSCompliant
Manufacturer
Toshiba
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-220
Mounting style
Through Hole
Packaging
Bulk
Fall Time
20ns
Rise Time
25ns
Rds On Max
1.3O
Number of Pins
3
Input Capacitance
2.2nF
Power Dissipation
50W
Number of Elements
1
Radiation Hardening
No
Max Power Dissipation
50W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Show 3 more specifications
Gate to Source Voltage (Vgs)
30V
Continuous Drain Current (ID)
8A
Drain to Source Voltage (Vdss)
900V

Common questions about 2SK3799(Q,M)

What is 2SK3799(Q,M)?
2SK3799(Q,M) is MOSFET N-CH 900V 8A TO220SIS, manufactured by Toshiba.
Who manufactures 2SK3799(Q,M)?
2SK3799(Q,M) is manufactured by Toshiba.
What package does 2SK3799(Q,M) come in?
2SK3799(Q,M) comes in a TO-220 package (Through Hole).
Is 2SK3799(Q,M) RoHS compliant?
The RoHS status of 2SK3799(Q,M) is: Compliant.
Where can I buy 2SK3799(Q,M)?
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