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Catalog

4N35-000E

Broadcom · DIP

Optoisolator Transistor with Base Output 355Vrms 1 Channel 6-DIP

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RoHSCompliant
Manufacturer
Broadcom
Categories
Semiconductors · Optoelectronics · Optocouplers
Package / case
DIP
Mounting style
Through Hole
Approvals
CSA, UL, VDE
Fall Time
10µs
Lead Free
Lead Free
Rise Time
10µs
REACH SVHC
No
Input Current
10mA
Number of Pins
6
Output Voltage
30V
Contact Plating
Tin
Forward Current
60mA
Forward Voltage
1.2V
Breakdown Voltage
30V
Show 17 more specifications
Isolation Voltage
3.55kV
Max Input Current
60mA
Power Dissipation
350mW
Max Output Voltage
30V
Number of Channels
1
Number of Circuits
1
Number of Elements
1
Radiation Hardening
No
Max Collector Current
100mA
Max Power Dissipation
350mW
Max Operating Temperature
100°C
Min Operating Temperature
-55°C
Reverse Breakdown Voltage
6V
Output Current per Channel
100mA
Collector Emitter Voltage (VCEO)
300mV
Collector Emitter Breakdown Voltage
70V
Collector Emitter Saturation Voltage
300mV

Common questions about 4N35-000E

What is 4N35-000E?
4N35-000E is Optoisolator Transistor with Base Output 355Vrms 1 Channel 6-DIP, manufactured by Broadcom.
Who manufactures 4N35-000E?
4N35-000E is manufactured by Broadcom.
What package does 4N35-000E come in?
4N35-000E comes in a DIP package (Through Hole).
Is 4N35-000E RoHS compliant?
The RoHS status of 4N35-000E is: Compliant.
Where can I buy 4N35-000E?
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