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AFT18P350-4S2LR6
NXP Semiconductors · NI-1230
RF Power Transistor,1805 to 1880 MHz, 316 W, Typ Gain in dB is 16.1 @ 1805 MHz, 28 V, LDMOS, SOT1800
RoHSCompliant
- Manufacturer
- NXP Semiconductors
- Package / case
- NI-1230
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Weight
- 8.518238g
- Halogen Free
- Halogen Free
- Number of Pins
- 4
- Number of Elements
- 2
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -40°C
- Gate to Source Voltage (Vgs)
- 1.2V
- Continuous Drain Current (ID)
- 1A
- Drain to Source Voltage (Vdss)
- 65V