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AFT20P060-4NR3

NXP Semiconductors

RF Power Transistor,1805 to 2170 MHz, 60 W, Typ Gain in dB is 18.9 @ 2170 MHz, 28 V, LDMOS, SOT1818

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RoHSCompliant
Manufacturer
NXP Semiconductors
Categories
Semiconductors · Discrete Semiconductors · Transistors · RF Transistors
Mounting style
Surface Mount
Weight
3.081111g
Halogen Free
Halogen Free
Current Rating
10µA
Number of Pins
4
Contact Plating
Tin
Number of Elements
1
Radiation Hardening
No
Element Configuration
Single
Max Operating Temperature
225°C
Min Operating Temperature
-40°C
Gate to Source Voltage (Vgs)
10V
Drain to Source Voltage (Vdss)
65V
Drain to Source Breakdown Voltage
65V

Common questions about AFT20P060-4NR3

What is AFT20P060-4NR3?
AFT20P060-4NR3 is RF Power Transistor,1805 to 2170 MHz, 60 W, Typ Gain in dB is 18.9 @ 2170 MHz, 28 V, LDMOS, SOT1818, manufactured by NXP Semiconductors.
Who manufactures AFT20P060-4NR3?
AFT20P060-4NR3 is manufactured by NXP Semiconductors.
Is AFT20P060-4NR3 RoHS compliant?
The RoHS status of AFT20P060-4NR3 is: Compliant.
Where can I buy AFT20P060-4NR3?
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