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AFT20P060-4NR3
NXP Semiconductors
RF Power Transistor,1805 to 2170 MHz, 60 W, Typ Gain in dB is 18.9 @ 2170 MHz, 28 V, LDMOS, SOT1818
RoHSCompliant
- Manufacturer
- NXP Semiconductors
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · RF Transistors
- Mounting style
- Surface Mount
- Weight
- 3.081111g
- Halogen Free
- Halogen Free
- Current Rating
- 10µA
- Number of Pins
- 4
- Contact Plating
- Tin
- Number of Elements
- 1
- Radiation Hardening
- No
- Element Configuration
- Single
- Max Operating Temperature
- 225°C
- Min Operating Temperature
- -40°C
- Gate to Source Voltage (Vgs)
- 10V
- Drain to Source Voltage (Vdss)
- 65V
- Drain to Source Breakdown Voltage
- 65V
Common questions about AFT20P060-4NR3
- What is AFT20P060-4NR3?
- AFT20P060-4NR3 is RF Power Transistor,1805 to 2170 MHz, 60 W, Typ Gain in dB is 18.9 @ 2170 MHz, 28 V, LDMOS, SOT1818, manufactured by NXP Semiconductors.
- Who manufactures AFT20P060-4NR3?
- AFT20P060-4NR3 is manufactured by NXP Semiconductors.
- Is AFT20P060-4NR3 RoHS compliant?
- The RoHS status of AFT20P060-4NR3 is: Compliant.
- Where can I buy AFT20P060-4NR3?
- Send an RFQ to Makat and our AI agents source AFT20P060-4NR3 across the whole supplier network, with verified offers inside 48 hours.