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AFT20P140-4WNR3

NXP Semiconductors

RF Power Transistor,1880 to 2025 MHz, 130 W, Typ Gain in dB is 17.6 @ 2025 MHz, 28 V, LDMOS, SOT1818

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RoHSCompliant
Manufacturer
NXP Semiconductors
Categories
Semiconductors · Discrete Semiconductors · Transistors · RF Transistors
Mounting style
Surface Mount
Packaging
Tape & Reel
Weight
3.187309g
Current Rating
10µA
Number of Pins
4
Element Configuration
Single
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Gate to Source Voltage (Vgs)
600mV
Continuous Drain Current (ID)
500mA
Drain to Source Voltage (Vdss)
65V
Drain to Source Breakdown Voltage
65V

Common questions about AFT20P140-4WNR3

What is AFT20P140-4WNR3?
AFT20P140-4WNR3 is RF Power Transistor,1880 to 2025 MHz, 130 W, Typ Gain in dB is 17.6 @ 2025 MHz, 28 V, LDMOS, SOT1818, manufactured by NXP Semiconductors.
Who manufactures AFT20P140-4WNR3?
AFT20P140-4WNR3 is manufactured by NXP Semiconductors.
Is AFT20P140-4WNR3 RoHS compliant?
The RoHS status of AFT20P140-4WNR3 is: Compliant.
Where can I buy AFT20P140-4WNR3?
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