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AFT20P140-4WNR3
NXP Semiconductors
RF Power Transistor,1880 to 2025 MHz, 130 W, Typ Gain in dB is 17.6 @ 2025 MHz, 28 V, LDMOS, SOT1818
RoHSCompliant
- Manufacturer
- NXP Semiconductors
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · RF Transistors
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Weight
- 3.187309g
- Current Rating
- 10µA
- Number of Pins
- 4
- Element Configuration
- Single
- Max Operating Temperature
- 125°C
- Min Operating Temperature
- -40°C
- Gate to Source Voltage (Vgs)
- 600mV
- Continuous Drain Current (ID)
- 500mA
- Drain to Source Voltage (Vdss)
- 65V
- Drain to Source Breakdown Voltage
- 65V
Common questions about AFT20P140-4WNR3
- What is AFT20P140-4WNR3?
- AFT20P140-4WNR3 is RF Power Transistor,1880 to 2025 MHz, 130 W, Typ Gain in dB is 17.6 @ 2025 MHz, 28 V, LDMOS, SOT1818, manufactured by NXP Semiconductors.
- Who manufactures AFT20P140-4WNR3?
- AFT20P140-4WNR3 is manufactured by NXP Semiconductors.
- Is AFT20P140-4WNR3 RoHS compliant?
- The RoHS status of AFT20P140-4WNR3 is: Compliant.
- Where can I buy AFT20P140-4WNR3?
- Send an RFQ to Makat and our AI agents source AFT20P140-4WNR3 across the whole supplier network, with verified offers inside 48 hours.