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AFT23H200-4S2LR6
NXP Semiconductors
RF Power Transistor,2300 to 2400 MHz, 210 W, Typ Gain in dB is 15.3 @ 2300 MHz, 28 V, LDMOS, SOT1800
RoHSCompliant
- Manufacturer
- NXP Semiconductors
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · RF Transistors
- Mounting style
- Surface Mount
- Weight
- 8.604194g
- Number of Pins
- 6
- Number of Elements
- 2
- Radiation Hardening
- No
- Max Operating Temperature
- 225°C
- Min Operating Temperature
- -40°C
- Gate to Source Voltage (Vgs)
- 10V
Common questions about AFT23H200-4S2LR6
- What is AFT23H200-4S2LR6?
- AFT23H200-4S2LR6 is RF Power Transistor,2300 to 2400 MHz, 210 W, Typ Gain in dB is 15.3 @ 2300 MHz, 28 V, LDMOS, SOT1800, manufactured by NXP Semiconductors.
- Who manufactures AFT23H200-4S2LR6?
- AFT23H200-4S2LR6 is manufactured by NXP Semiconductors.
- Is AFT23H200-4S2LR6 RoHS compliant?
- The RoHS status of AFT23H200-4S2LR6 is: Compliant.
- Where can I buy AFT23H200-4S2LR6?
- Send an RFQ to Makat and our AI agents source AFT23H200-4S2LR6 across the whole supplier network, with verified offers inside 48 hours.