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AFV09P350-04GNR3
NXP Semiconductors
RF Power Transistor,720 to 960 MHz, 200 W, Typ Gain in dB is 19.5 @ 920 MHz, 48 V, LDMOS, SOT1825
RoHSCompliant
- Manufacturer
- NXP Semiconductors
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Number of Pins
- 4
- Contact Plating
- Tin
- Max Operating Temperature
- 225°C
- Min Operating Temperature
- -40°C
- Gate to Source Voltage (Vgs)
- 10V