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BC807-40QB-QZ
Nexperia · Active
Transistor GP BJT PNP 45V 500mA 3-Pin DFN1110D T/R
LifecycleActiveRoHSCompliant
- Manufacturer
- Nexperia
- Height
- 500µm
- HFE Min
- 250
- Power Dissipation
- 350mW
- Number of Elements
- 1
- Max Collector Current
- -500mA
- Max Operating Temperature
- 150°C
- Emitter Base Voltage (VEBO)
- -5V
- Collector Base Voltage (VCBO)
- -50V
- Manufacturer Lifecycle Status
- Production
- Max Junction Temperature (Tj)
- 150°C
- Ambient Temperature Range High
- 150°C
- Collector Emitter Voltage (VCEO)
- -45V
- Collector Emitter Breakdown Voltage
- -45V
- Collector Emitter Saturation Voltage
- -700mV