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BD13710STU
onsemi · TO-126 · Active
D135 Series 60 V 1.5 A Through Hole NPN Epitaxial Silicon Transistor - TO-126
LifecycleActiveRoHSCompliant
- Manufacturer
- onsemi
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Package / case
- TO-126
- Mounting style
- Through Hole
- Weight
- 761mg
- HFE Min
- 40
- Polarity
- NPN
- Lead Free
- Lead Free
- REACH SVHC
- No
- Schedule B
- 8541290080
- Current Rating
- 1.5A
- Number of Pins
- 3
- Contact Plating
- Tin
- Power Dissipation
- 1.25W
- Number of Elements
- 1
- Radiation Hardening
- No
Show 12 more specificationsShow fewer specifications
- Voltage Rating (DC)
- 60V
- Element Configuration
- Single
- Max Collector Current
- 1.5A
- Max Power Dissipation
- 1.25W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Emitter Base Voltage (VEBO)
- 5V
- Collector Base Voltage (VCBO)
- 60V
- Manufacturer Lifecycle Status
- Production
- Collector Emitter Voltage (VCEO)
- 60V
- Collector Emitter Breakdown Voltage
- 60V
- Collector Emitter Saturation Voltage
- 500mV
Common questions about BD13710STU
- What is BD13710STU?
- BD13710STU is D135 Series 60 V 1.5 A Through Hole NPN Epitaxial Silicon Transistor - TO-126, manufactured by onsemi.
- Who manufactures BD13710STU?
- BD13710STU is manufactured by onsemi.
- What package does BD13710STU come in?
- BD13710STU comes in a TO-126 package (Through Hole).
- Is BD13710STU RoHS compliant?
- The RoHS status of BD13710STU is: Compliant.
- Is BD13710STU still in production?
- BD13710STU has a lifecycle status of Active.
- Where can I buy BD13710STU?
- Send an RFQ to Makat and our AI agents source BD13710STU across the whole supplier network, with verified offers inside 48 hours.