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BFR840L3RHESDE6327XTSA1

Infineon · Active

The BFR840L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications, TSLP-3-9, RoHS

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LifecycleActiveRoHSCompliant
Manufacturer
Infineon
Categories
Semiconductors · Discrete Semiconductors · Transistors · BJTs
Mounting style
Surface Mount
Packaging
Tape & Reel
Standard packaging qty
15
Gain
27dB
Polarity
NPN
Frequency
75GHz
Lead Free
Lead Free
Power Gain
26.5dB
Halogen Free
Halogen Free
Noise Figure
0.5dB
Number of Pins
3
Contact Plating
Gold
Transition Frequency
75GHz
Element Configuration
Single
Show 10 more specifications
Max Breakdown Voltage
2.6V
Max Collector Current
35mA
Max Power Dissipation
75mW
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Emitter Base Voltage (VEBO)
2.9V
Continuous Collector Current
35mA
Collector Base Voltage (VCBO)
2.9V
Collector Emitter Voltage (VCEO)
2.25V
Collector Emitter Breakdown Voltage
2.6V

Common questions about BFR840L3RHESDE6327XTSA1

What is BFR840L3RHESDE6327XTSA1?
BFR840L3RHESDE6327XTSA1 is The BFR840L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications, TSLP-3-9, RoHS, manufactured by Infineon.
Who manufactures BFR840L3RHESDE6327XTSA1?
BFR840L3RHESDE6327XTSA1 is manufactured by Infineon.
Is BFR840L3RHESDE6327XTSA1 RoHS compliant?
The RoHS status of BFR840L3RHESDE6327XTSA1 is: Compliant.
Is BFR840L3RHESDE6327XTSA1 still in production?
BFR840L3RHESDE6327XTSA1 has a lifecycle status of Active.
Where can I buy BFR840L3RHESDE6327XTSA1?
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