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BSC046N02KSGAUMA1
Infineon · Active
MOSFET, N CH, 80A, 20V, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 950mV; Po
LifecycleActiveRoHSCompliant
- Manufacturer
- Infineon
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Packaging
- Tape & Reel
- Standard packaging qty
- 5
- Width
- 5.35mm
- Height
- 1.1mm
- Length
- 6.35mm
- Fall Time
- 6ns
- Rise Time
- 117ns
- REACH SVHC
- No
- Rds On Max
- 4.6mO
- Schedule B
- 8541290080
- Nominal Vgs
- 950mV
- Halogen Free
- Halogen Free
- Number of Pins
- 8
- Input Capacitance
- 3.1nF
Show 14 more specificationsShow fewer specifications
- Power Dissipation
- 48W
- Threshold Voltage
- 950mV
- Turn On Delay Time
- 15ns
- On State Resistance
- 4.6mO
- Turn Off Delay Time
- 34ns
- Element Configuration
- Single
- Max Power Dissipation
- 48W
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 4.6mO
- Gate to Source Voltage (Vgs)
- 12V
- Continuous Drain Current (ID)
- 80A
- Drain to Source Voltage (Vdss)
- 20V
- Drain to Source Breakdown Voltage
- 20V
Common questions about BSC046N02KSGAUMA1
- What is BSC046N02KSGAUMA1?
- BSC046N02KSGAUMA1 is MOSFET, N CH, 80A, 20V, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 950mV; Po, manufactured by Infineon.
- Who manufactures BSC046N02KSGAUMA1?
- BSC046N02KSGAUMA1 is manufactured by Infineon.
- Is BSC046N02KSGAUMA1 RoHS compliant?
- The RoHS status of BSC046N02KSGAUMA1 is: Compliant.
- Is BSC046N02KSGAUMA1 still in production?
- BSC046N02KSGAUMA1 has a lifecycle status of Active.
- Where can I buy BSC046N02KSGAUMA1?
- Send an RFQ to Makat and our AI agents source BSC046N02KSGAUMA1 across the whole supplier network, with verified offers inside 48 hours.