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BSC060P03NS3EGATMA1
Infineon · Active
ingle P-Channel 30 V 6 mOhm 61 nC OptiMOS Power Mosfet - TDSON-8
LifecycleActiveRoHSCompliant
- Manufacturer
- Infineon
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Standard packaging qty
- 5
- Lead Free
- Contains Lead
- Rise Time
- 139ns
- REACH SVHC
- No
- Schedule B
- 8541290080
- Halogen Free
- Halogen Free
- Number of Pins
- 8
- Contact Plating
- Tin
- Input Capacitance
- 4.53nF
- Power Dissipation
- 2.5W
- Threshold Voltage
- 2.5V
- Number of Elements
- 1
Show 9 more specificationsShow fewer specifications
- On State Resistance
- 6mO
- Max Power Dissipation
- 83W
- Max Dual Supply Voltage
- 30V
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 4.1mO
- Gate to Source Voltage (Vgs)
- 25V
- Continuous Drain Current (ID)
- 17.7A
- Drain to Source Voltage (Vdss)
- 30V
Common questions about BSC060P03NS3EGATMA1
- What is BSC060P03NS3EGATMA1?
- BSC060P03NS3EGATMA1 is ingle P-Channel 30 V 6 mOhm 61 nC OptiMOS Power Mosfet - TDSON-8, manufactured by Infineon.
- Who manufactures BSC060P03NS3EGATMA1?
- BSC060P03NS3EGATMA1 is manufactured by Infineon.
- Is BSC060P03NS3EGATMA1 RoHS compliant?
- The RoHS status of BSC060P03NS3EGATMA1 is: Compliant.
- Is BSC060P03NS3EGATMA1 still in production?
- BSC060P03NS3EGATMA1 has a lifecycle status of Active.
- Where can I buy BSC060P03NS3EGATMA1?
- Send an RFQ to Makat and our AI agents source BSC060P03NS3EGATMA1 across the whole supplier network, with verified offers inside 48 hours.