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BSC350N20NSFDATMA1
Infineon · Active
MOSFET, N-CH, 200V, 35A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.031ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 150W; Tra
LifecycleActiveRoHSNon-Compliant
- Manufacturer
- Infineon
- Packaging
- Tape & Reel
- Standard packaging qty
- 5
- Height
- 1.1mm
- Power Dissipation
- 150W
- Number of Channels
- 1
- Turn On Delay Time
- 8ns
- On State Resistance
- 35mO
- Turn Off Delay Time
- 17ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 31mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 35A
- Max Junction Temperature (Tj)
- 175°C
- Drain to Source Voltage (Vdss)
- 200V