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BYQ30E-200,127
NXP Semiconductors · TO-220AB
8 A 200 V SILICON RECTIFIER DIODE TO-220AB
RoHSCompliant
- Manufacturer
- NXP Semiconductors
- Categories
- Semiconductors · Discrete Semiconductors · Diodes · Rectifier Diodes
- Package / case
- TO-220AB
- Mounting style
- Through Hole
- Width
- 4.7mm
- Height
- 9.4mm
- Length
- 10.3mm
- Lead Free
- Lead Free
- Recovery Time
- 25ns
- Number of Pins
- 3
- Contact Plating
- Tin
- Forward Current
- 16A
- Reverse Voltage
- 200V
- Max Surge Current
- 88A
- Radiation Hardening
- No
- Peak Reverse Current
- 30µA
Show 9 more specificationsShow fewer specifications
- Element Configuration
- Common Cathode
- Reverse Recovery Time
- 25ns
- Max Reverse Voltage (DC)
- 200V
- Average Rectified Current
- 16A
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -40°C
- Max Forward Surge Current (Ifsm)
- 88A
- Peak Non Repetitive Surge Current
- 88A
- Max Repetitive Reverse Voltage (Vrrm)
- 200V
Common questions about BYQ30E-200,127
- What is BYQ30E-200,127?
- BYQ30E-200,127 is 8 A 200 V SILICON RECTIFIER DIODE TO-220AB, manufactured by NXP Semiconductors.
- Who manufactures BYQ30E-200,127?
- BYQ30E-200,127 is manufactured by NXP Semiconductors.
- What package does BYQ30E-200,127 come in?
- BYQ30E-200,127 comes in a TO-220AB package (Through Hole).
- Is BYQ30E-200,127 RoHS compliant?
- The RoHS status of BYQ30E-200,127 is: Compliant.
- Where can I buy BYQ30E-200,127?
- Send an RFQ to Makat and our AI agents source BYQ30E-200,127 across the whole supplier network, with verified offers inside 48 hours.