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BYR29-800,127
NXP Semiconductors · TO-220
DIODE GEN PURP 800V 8A TO220AC
RoHSCompliant
- Manufacturer
- NXP Semiconductors
- Categories
- Semiconductors · Discrete Semiconductors · Diodes · Rectifier Diodes
- Package / case
- TO-220
- Mounting style
- Through Hole
- Recovery Time
- 75ns
- Number of Pins
- 2
- Forward Current
- 8A
- Reverse Voltage
- 800V
- Max Surge Current
- 66A
- Radiation Hardening
- No
- Peak Reverse Current
- 10µA
- Element Configuration
- Single
- Reverse Recovery Time
- 75ns
- Max Reverse Voltage (DC)
- 800V
- Average Rectified Current
- 8A
- Max Operating Temperature
- 150°C
Show 3 more specificationsShow fewer specifications
- Min Operating Temperature
- -40°C
- Peak Non Repetitive Surge Current
- 66A
- Max Repetitive Reverse Voltage (Vrrm)
- 800V
Common questions about BYR29-800,127
- What is BYR29-800,127?
- BYR29-800,127 is DIODE GEN PURP 800V 8A TO220AC, manufactured by NXP Semiconductors.
- Who manufactures BYR29-800,127?
- BYR29-800,127 is manufactured by NXP Semiconductors.
- What package does BYR29-800,127 come in?
- BYR29-800,127 comes in a TO-220 package (Through Hole).
- Is BYR29-800,127 RoHS compliant?
- The RoHS status of BYR29-800,127 is: Compliant.
- Where can I buy BYR29-800,127?
- Send an RFQ to Makat and our AI agents source BYR29-800,127 across the whole supplier network, with verified offers inside 48 hours.