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DF80R12W2H3FB11BPSA1
Infineon · Active
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel
LifecycleActiveRoHSCompliant
- Manufacturer
- Infineon
- Categories
- Semiconductors · Discrete Semiconductors · Diodes · Rectifier Diodes
- Standard packaging qty
- 15
- Height
- 12.35mm
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -40°C
- Max Junction Temperature (Tj)
- 150°C
Common questions about DF80R12W2H3FB11BPSA1
- What is DF80R12W2H3FB11BPSA1?
- DF80R12W2H3FB11BPSA1 is Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, manufactured by Infineon.
- Who manufactures DF80R12W2H3FB11BPSA1?
- DF80R12W2H3FB11BPSA1 is manufactured by Infineon.
- Is DF80R12W2H3FB11BPSA1 RoHS compliant?
- The RoHS status of DF80R12W2H3FB11BPSA1 is: Compliant.
- Is DF80R12W2H3FB11BPSA1 still in production?
- DF80R12W2H3FB11BPSA1 has a lifecycle status of Active.
- Where can I buy DF80R12W2H3FB11BPSA1?
- Send an RFQ to Makat and our AI agents source DF80R12W2H3FB11BPSA1 across the whole supplier network, with verified offers inside 48 hours.