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DMN1019UFDE-7
Diodes Inc. · DFN EP
N-Channel 12 V 10 mOhm Enhancement Mode Mosfet - U-DFN2020-6
RoHSCompliant
- Manufacturer
- Diodes Inc.
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- DFN EP
- Mounting style
- Surface Mount
- Width
- 2.05mm
- Height
- 580µm
- Length
- 2.05mm
- Fall Time
- 16.8ns
- Lead Free
- Lead Free
- Rise Time
- 22.2ns
- REACH SVHC
- No
- Rds On Max
- 10mO
- Schedule B
- 8541290080
- Number of Pins
- 6
- Contact Plating
- Gold
- Input Capacitance
- 2.425nF
Show 13 more specificationsShow fewer specifications
- Number of Channels
- 1
- Number of Elements
- 1
- Turn On Delay Time
- 7.6ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 57.6ns
- Element Configuration
- Single
- Max Power Dissipation
- 690mW
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 10mO
- Gate to Source Voltage (Vgs)
- 8V
- Continuous Drain Current (ID)
- 11A
- Drain to Source Voltage (Vdss)
- 12V
Common questions about DMN1019UFDE-7
- What is DMN1019UFDE-7?
- DMN1019UFDE-7 is N-Channel 12 V 10 mOhm Enhancement Mode Mosfet - U-DFN2020-6, manufactured by Diodes Inc..
- Who manufactures DMN1019UFDE-7?
- DMN1019UFDE-7 is manufactured by Diodes Inc..
- What package does DMN1019UFDE-7 come in?
- DMN1019UFDE-7 comes in a DFN EP package (Surface Mount).
- Is DMN1019UFDE-7 RoHS compliant?
- The RoHS status of DMN1019UFDE-7 is: Compliant.
- Where can I buy DMN1019UFDE-7?
- Send an RFQ to Makat and our AI agents source DMN1019UFDE-7 across the whole supplier network, with verified offers inside 48 hours.