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DXTN07100BP5-13
Diodes Inc.
Trans GP BJT NPN 100V 2A 3200mW 3-Pin(3+Tab) PowerDI 5 T/R
RoHSCompliant
- Manufacturer
- Diodes Inc.
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Mounting style
- Surface Mount
- Weight
- 95.991485mg
- HFE Min
- 100
- Polarity
- NPN
- Frequency
- 175MHz
- REACH SVHC
- No
- Number of Pins
- 5
- Power Dissipation
- 3.2W
- Number of Elements
- 1
- Radiation Hardening
- No
- Transition Frequency
- 175MHz
- Element Configuration
- Single
- Max Breakdown Voltage
- 100V
- Max Collector Current
- 2A
Show 9 more specificationsShow fewer specifications
- Max Power Dissipation
- 3.2W
- Gain Bandwidth Product
- 175MHz
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Emitter Base Voltage (VEBO)
- 7V
- Collector Base Voltage (VCBO)
- 120V
- Collector Emitter Voltage (VCEO)
- 100V
- Collector Emitter Breakdown Voltage
- 100V
- Collector Emitter Saturation Voltage
- 500mV
Common questions about DXTN07100BP5-13
- What is DXTN07100BP5-13?
- DXTN07100BP5-13 is Trans GP BJT NPN 100V 2A 3200mW 3-Pin(3+Tab) PowerDI 5 T/R, manufactured by Diodes Inc..
- Who manufactures DXTN07100BP5-13?
- DXTN07100BP5-13 is manufactured by Diodes Inc..
- Is DXTN07100BP5-13 RoHS compliant?
- The RoHS status of DXTN07100BP5-13 is: Compliant.
- Where can I buy DXTN07100BP5-13?
- Send an RFQ to Makat and our AI agents source DXTN07100BP5-13 across the whole supplier network, with verified offers inside 48 hours.