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DXTN10060DFJBWQ-7
Diodes Inc. · Active
Bipolar (BJT) Single Transistor, NPN, 60 V, 4 A, 1.8 W, WDFN2020, Surface Mount
LifecycleActiveRoHSCompliant
- Manufacturer
- Diodes Inc.
- RoHS
- Compliant
- HFE Min
- 20
- REACH SVHC
- Yes
- Introduction Date
- 2019-11-11
- Number of Elements
- 1
- Number of Terminals
- 3
- Transition Frequency
- 125MHz
- Max Collector Current
- 4A
- Max Power Dissipation
- 1.8W
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Collector Emitter Voltage (VCEO)
- 60V
- Collector Emitter Saturation Voltage
- 320mV