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Catalog

F475R06W1E3BOMA1

Infineon · Active

IGBT,MED POW,QUAD WITH NTC,600V,75A; Module Configuration:Quad; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Max:275W; Collector Emitter Voltage V(br)ceo:600V; Operating

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LifecycleActiveRoHSNon-Compliant
Manufacturer
Infineon
Categories
Semiconductors · Discrete Semiconductors · Transistors · IGBTs
Standard packaging qty
24
Height
12.35mm
Lead Free
Contains Lead
Halogen Free
Not Halogen Free
Number of Pins
15
Power Dissipation
275W
Turn On Delay Time
25ns
Turn Off Delay Time
200ns
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Continuous Collector Current
100A
Max Junction Temperature (Tj)
150°C
Collector Emitter Voltage (VCEO)
600V
Collector Emitter Saturation Voltage
1.45V

Common questions about F475R06W1E3BOMA1

What is F475R06W1E3BOMA1?
F475R06W1E3BOMA1 is IGBT,MED POW,QUAD WITH NTC,600V,75A; Module Configuration:Quad; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Max:275W; Collector Emitter Voltage V(br)ceo:600V; Operating, manufactured by Infineon.
Who manufactures F475R06W1E3BOMA1?
F475R06W1E3BOMA1 is manufactured by Infineon.
Is F475R06W1E3BOMA1 RoHS compliant?
The RoHS status of F475R06W1E3BOMA1 is: Non-Compliant.
Is F475R06W1E3BOMA1 still in production?
F475R06W1E3BOMA1 has a lifecycle status of Active.
Where can I buy F475R06W1E3BOMA1?
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