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Catalog

FCH190N65F-F155

onsemi · TO-247 · Active

Power Field-Effect Transistor, 20.6A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

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LifecycleActiveRoHSCompliant
Manufacturer
onsemi
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-247
Mounting style
Through Hole
Weight
6.39g
Fall Time
4.2ns
Rise Time
11ns
Rds On Max
190mO
Resistance
190mO
Input Capacitance
3.225nF
Number of Channels
1
Turn On Delay Time
25ns
Turn Off Delay Time
62ns
Element Configuration
Single
Max Power Dissipation
208W
Max Operating Temperature
150°C
Show 6 more specifications
Min Operating Temperature
-55°C
Drain to Source Resistance
168mO
Gate to Source Voltage (Vgs)
30V
Continuous Drain Current (ID)
20.6A
Manufacturer Lifecycle Status
Production
Drain to Source Voltage (Vdss)
650V

Common questions about FCH190N65F-F155

What is FCH190N65F-F155?
FCH190N65F-F155 is Power Field-Effect Transistor, 20.6A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB, manufactured by onsemi.
Who manufactures FCH190N65F-F155?
FCH190N65F-F155 is manufactured by onsemi.
What package does FCH190N65F-F155 come in?
FCH190N65F-F155 comes in a TO-247 package (Through Hole).
Is FCH190N65F-F155 RoHS compliant?
The RoHS status of FCH190N65F-F155 is: Compliant.
Is FCH190N65F-F155 still in production?
FCH190N65F-F155 has a lifecycle status of Active.
Where can I buy FCH190N65F-F155?
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