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FF600R12KE4BOSA1
Infineon · Active
IGBT MODULE, N-CH, 1.2KV, 600A; Transistor Polarity: N Channel; DC Collector Current: 600A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor C
LifecycleActiveRoHSNon-Compliant
- Manufacturer
- Infineon
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · IGBTs
- Packaging
- Tray
- Standard packaging qty
- 10
- Height
- 31.4mm
- Turn On Delay Time
- 170ns
- Turn Off Delay Time
- 400ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -40°C
- Max Junction Temperature (Tj)
- 150°C
Common questions about FF600R12KE4BOSA1
- What is FF600R12KE4BOSA1?
- FF600R12KE4BOSA1 is IGBT MODULE, N-CH, 1.2KV, 600A; Transistor Polarity: N Channel; DC Collector Current: 600A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor C, manufactured by Infineon.
- Who manufactures FF600R12KE4BOSA1?
- FF600R12KE4BOSA1 is manufactured by Infineon.
- Is FF600R12KE4BOSA1 RoHS compliant?
- The RoHS status of FF600R12KE4BOSA1 is: Non-Compliant.
- Is FF600R12KE4BOSA1 still in production?
- FF600R12KE4BOSA1 has a lifecycle status of Active.
- Where can I buy FF600R12KE4BOSA1?
- Send an RFQ to Makat and our AI agents source FF600R12KE4BOSA1 across the whole supplier network, with verified offers inside 48 hours.