CatalogSend an RFQ
FGA50N100BNTDTU
onsemi · Active
Transistor,igbt,n-Chan+Diode,1Kv V(Br)Ces,50A I(C),to-247Var
LifecycleActiveRoHSCompliant
- Manufacturer
- onsemi
- Mounting style
- Through Hole
- Width
- 5mm
- Height
- 20.1mm
- Length
- 15.8mm
- Weight
- 6.401g
- Number of Pins
- 3
- Power Dissipation
- 156W
- Radiation Hardening
- No
- Element Configuration
- Single
- Max Collector Current
- 50A
- Max Power Dissipation
- 156W
- Reverse Recovery Time
- 1.5µs
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Manufacturer Lifecycle Status
- Production