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FGA50S110P
onsemi · Active
GBT, 1100V, 50A, Shorted-anode
LifecycleActiveRoHSCompliant
- Manufacturer
- onsemi
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · IGBTs
- Mounting style
- Through Hole
- Width
- 5mm
- Height
- 20.1mm
- Length
- 15.8mm
- Weight
- 6.401g
- Number of Pins
- 3
- Power Dissipation
- 300W
- Radiation Hardening
- No
- Element Configuration
- Single
- Max Collector Current
- 50A
- Max Power Dissipation
- 300W
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -55°C
- Manufacturer Lifecycle Status
- Production
Show 3 more specificationsShow fewer specifications
- Collector Emitter Voltage (VCEO)
- 1.1kV
- Collector Emitter Breakdown Voltage
- 1.1kV
- Collector Emitter Saturation Voltage
- 2.7V
Common questions about FGA50S110P
- What is FGA50S110P?
- FGA50S110P is GBT, 1100V, 50A, Shorted-anode, manufactured by onsemi.
- Who manufactures FGA50S110P?
- FGA50S110P is manufactured by onsemi.
- Is FGA50S110P RoHS compliant?
- The RoHS status of FGA50S110P is: Compliant.
- Is FGA50S110P still in production?
- FGA50S110P has a lifecycle status of Active.
- Where can I buy FGA50S110P?
- Send an RFQ to Makat and our AI agents source FGA50S110P across the whole supplier network, with verified offers inside 48 hours.