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FJA4313OTU
onsemi · Active
PN EPITAXIAL SILICON TRANSISTOR;
LifecycleActiveRoHSCompliant
- Manufacturer
- onsemi
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Mounting style
- Through Hole
- Weight
- 6.401g
- HFE Min
- 55
- Polarity
- NPN
- Frequency
- 30MHz
- Lead Free
- Lead Free
- Schedule B
- 8541290080
- Current Rating
- 10A
- Number of Pins
- 3
- Power Dissipation
- 130W
- Number of Elements
- 1
- Voltage Rating (DC)
- 140V
- Transition Frequency
- 30MHz
- Element Configuration
- Single
Show 11 more specificationsShow fewer specifications
- Max Collector Current
- 17A
- Max Power Dissipation
- 130W
- Gain Bandwidth Product
- 30MHz
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -50°C
- Emitter Base Voltage (VEBO)
- 5V
- Collector Base Voltage (VCBO)
- 250V
- Manufacturer Lifecycle Status
- Production
- Collector Emitter Voltage (VCEO)
- 250V
- Collector Emitter Breakdown Voltage
- 250V
- Collector Emitter Saturation Voltage
- 400mV
Common questions about FJA4313OTU
- What is FJA4313OTU?
- FJA4313OTU is PN EPITAXIAL SILICON TRANSISTOR;, manufactured by onsemi.
- Who manufactures FJA4313OTU?
- FJA4313OTU is manufactured by onsemi.
- Is FJA4313OTU RoHS compliant?
- The RoHS status of FJA4313OTU is: Compliant.
- Is FJA4313OTU still in production?
- FJA4313OTU has a lifecycle status of Active.
- Where can I buy FJA4313OTU?
- Send an RFQ to Makat and our AI agents source FJA4313OTU across the whole supplier network, with verified offers inside 48 hours.