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Catalog

FP50R06W2E3BOMA1

Infineon · Active

IGBT, LOW POWER, 600V, 50A, EASYPIM; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:1.45V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +

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LifecycleActiveRoHSNon-Compliant
Manufacturer
Infineon
Categories
Semiconductors · Discrete Semiconductors · Transistors · IGBTs
Standard packaging qty
15
Height
12.35mm
Lead Free
Contains Lead
Halogen Free
Not Halogen Free
Number of Pins
23
Power Dissipation
175W
Turn On Delay Time
25ns
Turn Off Delay Time
190ns
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Continuous Collector Current
50A
Max Junction Temperature (Tj)
150°C
Collector Emitter Voltage (VCEO)
600V
Collector Emitter Saturation Voltage
1.45V

Common questions about FP50R06W2E3BOMA1

What is FP50R06W2E3BOMA1?
FP50R06W2E3BOMA1 is IGBT, LOW POWER, 600V, 50A, EASYPIM; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:1.45V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +, manufactured by Infineon.
Who manufactures FP50R06W2E3BOMA1?
FP50R06W2E3BOMA1 is manufactured by Infineon.
Is FP50R06W2E3BOMA1 RoHS compliant?
The RoHS status of FP50R06W2E3BOMA1 is: Non-Compliant.
Is FP50R06W2E3BOMA1 still in production?
FP50R06W2E3BOMA1 has a lifecycle status of Active.
Where can I buy FP50R06W2E3BOMA1?
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