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FQD5N60CTM-WS
onsemi · TO-252
Power Field-Effect Transistor, 3.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHSCompliant
- Manufacturer
- onsemi
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-252
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Voltage
- 600 V – 600 V
- Temperature
- -55°C – 150°C (TJ)
- Height
- 2.517mm
- Rds On Max
- 2.5O
- Input Capacitance
- 670pF
- Power Dissipation
- 2.5W
- Number of Channels
- 1
- Turn On Delay Time
- 10ns
- Turn Off Delay Time
- 38ns
- Max Power Dissipation
- 2.5W
- Max Operating Temperature
- 150°C
Show 7 more specificationsShow fewer specifications
- Min Operating Temperature
- -55°C
- Drain to Source Resistance
- 2O
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 2.8A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 600V
- Drain to Source Breakdown Voltage
- 600V
Common questions about FQD5N60CTM-WS
- What is FQD5N60CTM-WS?
- FQD5N60CTM-WS is Power Field-Effect Transistor, 3.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, manufactured by onsemi.
- Who manufactures FQD5N60CTM-WS?
- FQD5N60CTM-WS is manufactured by onsemi.
- What package does FQD5N60CTM-WS come in?
- FQD5N60CTM-WS comes in a TO-252 package (Surface Mount).
- Is FQD5N60CTM-WS RoHS compliant?
- The RoHS status of FQD5N60CTM-WS is: Compliant.
- Where can I buy FQD5N60CTM-WS?
- Send an RFQ to Makat and our AI agents source FQD5N60CTM-WS across the whole supplier network, with verified offers inside 48 hours.