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FQPF9N25CYDTU

onsemi · TO-220 · Active

Power Field-Effect Transistor, 8.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

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LifecycleActiveRoHSCompliant
Manufacturer
onsemi
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Package / case
TO-220
Mounting style
Through Hole
Packaging
Tape & Reel
Width
4.9mm
Height
16.07mm
Length
10.36mm
Weight
2.565g
Fall Time
65ns
Rise Time
85ns
Rds On Max
430mO
Number of Pins
3
Input Capacitance
710pF
Power Dissipation
38W
Number of Elements
1
Show 13 more specifications
Turn On Delay Time
15ns
Radiation Hardening
No
Turn Off Delay Time
90ns
Element Configuration
Single
Max Power Dissipation
38W
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Drain to Source Resistance
430mO
Gate to Source Voltage (Vgs)
30V
Continuous Drain Current (ID)
8.8A
Manufacturer Lifecycle Status
Production
Drain to Source Voltage (Vdss)
250V
Drain to Source Breakdown Voltage
250V

Common questions about FQPF9N25CYDTU

What is FQPF9N25CYDTU?
FQPF9N25CYDTU is Power Field-Effect Transistor, 8.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, manufactured by onsemi.
Who manufactures FQPF9N25CYDTU?
FQPF9N25CYDTU is manufactured by onsemi.
What package does FQPF9N25CYDTU come in?
FQPF9N25CYDTU comes in a TO-220 package (Through Hole).
Is FQPF9N25CYDTU RoHS compliant?
The RoHS status of FQPF9N25CYDTU is: Compliant.
Is FQPF9N25CYDTU still in production?
FQPF9N25CYDTU has a lifecycle status of Active.
Where can I buy FQPF9N25CYDTU?
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