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FQU2N90TU-AM002
onsemi · TO-251 · Active
Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
LifecycleActiveRoHSCompliant
- Manufacturer
- onsemi
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Package / case
- TO-251
- Mounting style
- Through Hole
- Weight
- 343.08mg
- Fall Time
- 30ns
- Rise Time
- 35ns
- Rds On Max
- 7.2O
- Number of Pins
- 3
- Input Capacitance
- 500pF
- Turn On Delay Time
- 15ns
- Radiation Hardening
- No
- Turn Off Delay Time
- 20ns
- Element Configuration
- Single
- Max Power Dissipation
- 2.5W
- Max Operating Temperature
- 150°C
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- Min Operating Temperature
- -55°C
- Gate to Source Voltage (Vgs)
- 30V
- Continuous Drain Current (ID)
- 1.7A
- Manufacturer Lifecycle Status
- Production
- Drain to Source Voltage (Vdss)
- 900V
Common questions about FQU2N90TU-AM002
- What is FQU2N90TU-AM002?
- FQU2N90TU-AM002 is Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, manufactured by onsemi.
- Who manufactures FQU2N90TU-AM002?
- FQU2N90TU-AM002 is manufactured by onsemi.
- What package does FQU2N90TU-AM002 come in?
- FQU2N90TU-AM002 comes in a TO-251 package (Through Hole).
- Is FQU2N90TU-AM002 RoHS compliant?
- The RoHS status of FQU2N90TU-AM002 is: Compliant.
- Is FQU2N90TU-AM002 still in production?
- FQU2N90TU-AM002 has a lifecycle status of Active.
- Where can I buy FQU2N90TU-AM002?
- Send an RFQ to Makat and our AI agents source FQU2N90TU-AM002 across the whole supplier network, with verified offers inside 48 hours.