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FS03MR12A6MA1BBPSA1
Infineon
Power Field-Effect Transistor, 1200V, 0.0037ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
- Manufacturer
- Infineon
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
- Height
- 22.31mm
- Number of Channels
- 6
- Turn On Delay Time
- 77ns
- Turn Off Delay Time
- 263ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -40°C
- Drain to Source Resistance
- 2.75mO
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 400A
- Max Junction Temperature (Tj)
- 150°C
- Drain to Source Voltage (Vdss)
- 1.2kV
Common questions about FS03MR12A6MA1BBPSA1
- What is FS03MR12A6MA1BBPSA1?
- FS03MR12A6MA1BBPSA1 is Power Field-Effect Transistor, 1200V, 0.0037ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, manufactured by Infineon.
- Who manufactures FS03MR12A6MA1BBPSA1?
- FS03MR12A6MA1BBPSA1 is manufactured by Infineon.
- Where can I buy FS03MR12A6MA1BBPSA1?
- Send an RFQ to Makat and our AI agents source FS03MR12A6MA1BBPSA1 across the whole supplier network, with verified offers inside 48 hours.