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FS100R12KT4GBOSA1
Infineon · Active
Transistor, Igbt Module, 1.2Kv, 100A; Transistor Polarity:n Channel; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:515W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transist
Also listed as FS100R12KT4G
LifecycleActiveRoHSNon-Compliant
- Manufacturer
- Infineon
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · IGBTs
- Standard packaging qty
- 10
- Height
- 17.5mm
- Lead Free
- Contains Lead
- Schedule B
- 8541290080
- Halogen Free
- Not Halogen Free
- Power Dissipation
- 515W
- Turn On Delay Time
- 115ns
- Turn Off Delay Time
- 370ns
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -40°C
- Max Junction Temperature (Tj)
- 150°C
Common questions about FS100R12KT4GBOSA1
- What is FS100R12KT4GBOSA1?
- FS100R12KT4GBOSA1 is Transistor, Igbt Module, 1.2Kv, 100A; Transistor Polarity:n Channel; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:515W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transist, manufactured by Infineon.
- Who manufactures FS100R12KT4GBOSA1?
- FS100R12KT4GBOSA1 is manufactured by Infineon.
- Is FS100R12KT4GBOSA1 RoHS compliant?
- The RoHS status of FS100R12KT4GBOSA1 is: Non-Compliant.
- Is FS100R12KT4GBOSA1 still in production?
- FS100R12KT4GBOSA1 has a lifecycle status of Active.
- Where can I buy FS100R12KT4GBOSA1?
- Send an RFQ to Makat and our AI agents source FS100R12KT4GBOSA1 across the whole supplier network, with verified offers inside 48 hours.