FS150R12KT4B11BOSA1

Infineon · Active

Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:750W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Com