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FZ600R12KS4HOSA1

Infineon · Module · Active

RANSISTOR, IGBT MODULE, 1.2KV, 700A; Transistor Polarity: N Channel; DC Collector Current: 700A; Collector Emitter Saturation Voltage Vce(on): 3.2V; Power Dissipation Pd: 3.9kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Tra

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LifecycleActiveRoHSCompliant
Manufacturer
Infineon
Package / case
Module
Mounting style
Screw
Standard packaging qty
10
Height
36.5mm
Schedule B
8541290080
Number of Pins
4
Power Dissipation
3.9kW
Turn On Delay Time
100ns
Turn Off Delay Time
530ns
Element Configuration
Single
Max Collector Current
700A
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Continuous Collector Current
600A
Max Junction Temperature (Tj)
125°C

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