Skip to content
Catalog

FZ600R17KE3HOSA1

Infineon · Active

Transistor, Igbt Module, 1.7Kv, 840A; Transistor Polarity:n Channel; Dc Collector Current:840A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:3.15Kw; Collector Emitter Voltage V(Br)Ceo:1.7Kv; Transi

Send an RFQ
LifecycleActiveRoHSNon-Compliant
Manufacturer
Infineon
Categories
Semiconductors · Discrete Semiconductors · Transistors · IGBTs
Standard packaging qty
10
Height
37.25mm
Lead Free
Lead Free
Halogen Free
Not Halogen Free
Number of Pins
4
Power Dissipation
3.15kW
Turn On Delay Time
280ns
Turn Off Delay Time
800ns
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Continuous Collector Current
840A
Max Junction Temperature (Tj)
125°C
Collector Emitter Voltage (VCEO)
1.7kV
Collector Emitter Saturation Voltage
2V

Common questions about FZ600R17KE3HOSA1

What is FZ600R17KE3HOSA1?
FZ600R17KE3HOSA1 is Transistor, Igbt Module, 1.7Kv, 840A; Transistor Polarity:n Channel; Dc Collector Current:840A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:3.15Kw; Collector Emitter Voltage V(Br)Ceo:1.7Kv; Transi, manufactured by Infineon.
Who manufactures FZ600R17KE3HOSA1?
FZ600R17KE3HOSA1 is manufactured by Infineon.
Is FZ600R17KE3HOSA1 RoHS compliant?
The RoHS status of FZ600R17KE3HOSA1 is: Non-Compliant.
Is FZ600R17KE3HOSA1 still in production?
FZ600R17KE3HOSA1 has a lifecycle status of Active.
Where can I buy FZ600R17KE3HOSA1?
Send an RFQ to Makat and our AI agents source FZ600R17KE3HOSA1 across the whole supplier network, with verified offers inside 48 hours.

Send an RFQ

Your BOM or RFQ file
or

We only use this to answer your request.