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HGT1S10N120BNST

onsemi · D2PAK · Active

Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R

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LifecycleActiveRoHSCompliant
Manufacturer
onsemi
Product series
NPT
Categories
Semiconductors · Discrete Semiconductors · Transistors · IGBTs
Package / case
D2PAK
Mounting style
Surface Mount
Packaging
Tape & Reel
Standard packaging qty
800
Width
9.65mm
Height
5.08mm
Length
10.67mm
Weight
1.31247g
Polarity
N-Channel
Lead Free
Lead Free
REACH SVHC
No
Schedule B
8541290080
Number of Pins
3
Show 18 more specifications
Output Current
35A
Input Capacitance
0.8nF
Power Dissipation
298W
Turn On Delay Time
23ns
Radiation Hardening
No
Turn Off Delay Time
165ns
Element Configuration
Single
Max Collector Current
35A
Max Power Dissipation
298W
Reverse Recovery Time
0.32µs
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Continuous Collector Current
35A
Manufacturer Lifecycle Status
Active
Max Junction Temperature (Tj)
150°C
Collector Emitter Voltage (VCEO)
1.2kV
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
4.2V

Common questions about HGT1S10N120BNST

What is HGT1S10N120BNST?
HGT1S10N120BNST is Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R, manufactured by onsemi.
Who manufactures HGT1S10N120BNST?
HGT1S10N120BNST is manufactured by onsemi.
What package does HGT1S10N120BNST come in?
HGT1S10N120BNST comes in a D2PAK package (Surface Mount).
Is HGT1S10N120BNST RoHS compliant?
The RoHS status of HGT1S10N120BNST is: Compliant.
Is HGT1S10N120BNST still in production?
HGT1S10N120BNST has a lifecycle status of Active.
Where can I buy HGT1S10N120BNST?
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