HN1A01FU-GR,LF

Toshiba

US6 PLN (LF) TRANSISTOR Pd=200mW F=1MHz

RoHSCompliant

Manufacturer: Toshiba
Categories: Semiconductors · Discrete Semiconductors · Transistors · BJTs
Mounting style: Surface Mount
Schedule B: 8541210080
Transition Frequency: 80MHz
Max Breakdown Voltage: 50V
Max Collector Current: 150mA
Max Power Dissipation: 200mW
Collector Emitter Voltage (VCEO): 300mV
Collector Emitter Breakdown Voltage: 50V

Common questions about HN1A01FU-GR,LF

What is HN1A01FU-GR,LF?: HN1A01FU-GR,LF is US6 PLN (LF) TRANSISTOR Pd=200mW F=1MHz, manufactured by Toshiba.
Who manufactures HN1A01FU-GR,LF?: HN1A01FU-GR,LF is manufactured by Toshiba.
Is HN1A01FU-GR,LF RoHS compliant?: The RoHS status of HN1A01FU-GR,LF is: Compliant.
Where can I buy HN1A01FU-GR,LF?: Send an RFQ to Makat and our AI agents source HN1A01FU-GR,LF across the whole supplier network, with verified offers inside 48 hours.