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HN1B01FU-GR,LF
Toshiba
Trans GP BJT NPN/PNP 50V 0.15A 6-Pin US Embossed T/R
RoHSCompliant
- Manufacturer
- Toshiba
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- Number of Pins
- 6
- Radiation Hardening
- No
- Transition Frequency
- 150MHz
- Max Breakdown Voltage
- 50V
- Max Collector Current
- 150mA
- Max Power Dissipation
- 210mW
- Max Operating Temperature
- 125°C
- Min Operating Temperature
- -55°C
- Collector Emitter Voltage (VCEO)
- 250mV
- Collector Emitter Breakdown Voltage
- 50V
Common questions about HN1B01FU-GR,LF
- What is HN1B01FU-GR,LF?
- HN1B01FU-GR,LF is Trans GP BJT NPN/PNP 50V 0.15A 6-Pin US Embossed T/R, manufactured by Toshiba.
- Who manufactures HN1B01FU-GR,LF?
- HN1B01FU-GR,LF is manufactured by Toshiba.
- Is HN1B01FU-GR,LF RoHS compliant?
- The RoHS status of HN1B01FU-GR,LF is: Compliant.
- Where can I buy HN1B01FU-GR,LF?
- Send an RFQ to Makat and our AI agents source HN1B01FU-GR,LF across the whole supplier network, with verified offers inside 48 hours.