HN1B04FE-GR,LF(T

Toshiba

Transistor for low frequency small-signal amplification 2 in 1

RoHSCompliant

Manufacturer: Toshiba
Categories: Semiconductors · Discrete Semiconductors · Transistors · BJTs
Mounting style: Surface Mount
Transition Frequency: 80MHz
Max Breakdown Voltage: 50V
Max Collector Current: 150mA
Max Power Dissipation: 100mW
Collector Emitter Voltage (VCEO): 250mV
Collector Emitter Breakdown Voltage: 50V

Common questions about HN1B04FE-GR,LF(T

What is HN1B04FE-GR,LF(T?: HN1B04FE-GR,LF(T is Transistor for low frequency small-signal amplification 2 in 1, manufactured by Toshiba.
Who manufactures HN1B04FE-GR,LF(T?: HN1B04FE-GR,LF(T is manufactured by Toshiba.
Is HN1B04FE-GR,LF(T RoHS compliant?: The RoHS status of HN1B04FE-GR,LF(T is: Compliant.
Where can I buy HN1B04FE-GR,LF(T?: Send an RFQ to Makat and our AI agents source HN1B04FE-GR,LF(T across the whole supplier network, with verified offers inside 48 hours.