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HN1B04FU-GR(L,F,T)
Toshiba
NPN/PNP TRANSIS ARR 60V US6
RoHSCompliant
- Manufacturer
- Toshiba
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Mounting style
- Surface Mount
- HFE Min
- 120
- Polarity
- NPN, PNP
- Number of Pins
- 6
- Power Dissipation
- 200mW
- Number of Elements
- 2
- Radiation Hardening
- No
- Transition Frequency
- 150MHz
- Element Configuration
- Dual
- Max Breakdown Voltage
- 50V
- Max Collector Current
- 150mA
- Max Power Dissipation
- 200mW
- Gain Bandwidth Product
- 120MHz
- Max Operating Temperature
- 125°C
Show 6 more specificationsShow fewer specifications
- Min Operating Temperature
- -55°C
- Emitter Base Voltage (VEBO)
- -5V
- Collector Base Voltage (VCBO)
- -50V
- Collector Emitter Voltage (VCEO)
- 250mV
- Collector Emitter Breakdown Voltage
- 50V
- Collector Emitter Saturation Voltage
- 100mV
Common questions about HN1B04FU-GR(L,F,T)
- What is HN1B04FU-GR(L,F,T)?
- HN1B04FU-GR(L,F,T) is NPN/PNP TRANSIS ARR 60V US6, manufactured by Toshiba.
- Who manufactures HN1B04FU-GR(L,F,T)?
- HN1B04FU-GR(L,F,T) is manufactured by Toshiba.
- Is HN1B04FU-GR(L,F,T) RoHS compliant?
- The RoHS status of HN1B04FU-GR(L,F,T) is: Compliant.
- Where can I buy HN1B04FU-GR(L,F,T)?
- Send an RFQ to Makat and our AI agents source HN1B04FU-GR(L,F,T) across the whole supplier network, with verified offers inside 48 hours.