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HN1C01FU-GR,LF(T
Toshiba · SSOP
Transistor 0.15A 50V NPN*2 HFE=200-400
RoHSCompliant
- Manufacturer
- Toshiba
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Package / case
- SSOP
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- HFE Min
- 120
- Polarity
- NPN
- Frequency
- 80MHz
- Number of Pins
- 6
- Power Dissipation
- 200mW
- Number of Elements
- 2
- Radiation Hardening
- No
- Transition Frequency
- 80MHz
- Element Configuration
- Dual
- Max Breakdown Voltage
- 50V
- Max Collector Current
- 150mA
Show 9 more specificationsShow fewer specifications
- Max Power Dissipation
- 200mW
- Gain Bandwidth Product
- 80MHz
- Max Operating Temperature
- 125°C
- Min Operating Temperature
- -55°C
- Emitter Base Voltage (VEBO)
- 5V
- Collector Base Voltage (VCBO)
- 60V
- Collector Emitter Voltage (VCEO)
- 50V
- Collector Emitter Breakdown Voltage
- 50V
- Collector Emitter Saturation Voltage
- 100mV
Common questions about HN1C01FU-GR,LF(T
- What is HN1C01FU-GR,LF(T?
- HN1C01FU-GR,LF(T is Transistor 0.15A 50V NPN*2 HFE=200-400, manufactured by Toshiba.
- Who manufactures HN1C01FU-GR,LF(T?
- HN1C01FU-GR,LF(T is manufactured by Toshiba.
- What package does HN1C01FU-GR,LF(T come in?
- HN1C01FU-GR,LF(T comes in a SSOP package (Surface Mount).
- Is HN1C01FU-GR,LF(T RoHS compliant?
- The RoHS status of HN1C01FU-GR,LF(T is: Compliant.
- Where can I buy HN1C01FU-GR,LF(T?
- Send an RFQ to Makat and our AI agents source HN1C01FU-GR,LF(T across the whole supplier network, with verified offers inside 48 hours.