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HN1C03FU-B(TE85L,F
Toshiba
Transistor for low frequency small-signal amplification 2 in 1
RoHSCompliant
- Manufacturer
- Toshiba
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · BJTs
- Mounting style
- Surface Mount
- Packaging
- Tape & Reel
- HFE Min
- 200
- Polarity
- NPN
- Number of Pins
- 6
- Radiation Hardening
- No
- Transition Frequency
- 30MHz
- Element Configuration
- Dual
- Max Breakdown Voltage
- 20V
- Max Collector Current
- 300mA
- Max Power Dissipation
- 200mW
- Gain Bandwidth Product
- 30MHz
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
Show 5 more specificationsShow fewer specifications
- Emitter Base Voltage (VEBO)
- 25V
- Collector Base Voltage (VCBO)
- 50V
- Collector Emitter Voltage (VCEO)
- 20V
- Collector Emitter Breakdown Voltage
- 20V
- Collector Emitter Saturation Voltage
- 42mV
Common questions about HN1C03FU-B(TE85L,F
- What is HN1C03FU-B(TE85L,F?
- HN1C03FU-B(TE85L,F is Transistor for low frequency small-signal amplification 2 in 1, manufactured by Toshiba.
- Who manufactures HN1C03FU-B(TE85L,F?
- HN1C03FU-B(TE85L,F is manufactured by Toshiba.
- Is HN1C03FU-B(TE85L,F RoHS compliant?
- The RoHS status of HN1C03FU-B(TE85L,F is: Compliant.
- Where can I buy HN1C03FU-B(TE85L,F?
- Send an RFQ to Makat and our AI agents source HN1C03FU-B(TE85L,F across the whole supplier network, with verified offers inside 48 hours.