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Catalog

IAUS200N08S5N023ATMA1

Infineon

80V, N-Ch, 2.3 mΩ max, Automotive MOSFET, TOLG, OptiMOS™-5, PG-HSOG-8, RoHS

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Manufacturer
Infineon
Categories
Semiconductors · Discrete Semiconductors · Transistors · MOSFETs
Packaging
Tape & Reel
Standard packaging qty
1
Height
2.4mm
Power Dissipation
200W
Number of Channels
1
Turn On Delay Time
16ns
Turn Off Delay Time
30ns
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Drain to Source Resistance
1.8mO
Gate to Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
200A
Max Junction Temperature (Tj)
175°C
Drain to Source Voltage (Vdss)
80V
Show 1 more specification
Drain to Source Breakdown Voltage
80V

Common questions about IAUS200N08S5N023ATMA1

What is IAUS200N08S5N023ATMA1?
IAUS200N08S5N023ATMA1 is 80V, N-Ch, 2.3 mΩ max, Automotive MOSFET, TOLG, OptiMOS™-5, PG-HSOG-8, RoHS, manufactured by Infineon.
Who manufactures IAUS200N08S5N023ATMA1?
IAUS200N08S5N023ATMA1 is manufactured by Infineon.
Where can I buy IAUS200N08S5N023ATMA1?
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