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IKB15N60TATMA1
Infineon · TO-263 · Active
GBT+ DIODE,600V,15A,TO263; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C;
LifecycleActiveRoHSCompliant
- Manufacturer
- Infineon
- Package / case
- TO-263
- Standard packaging qty
- 1
- Lead Free
- Lead Free
- REACH SVHC
- No
- Halogen Free
- Halogen Free
- Number of Pins
- 3
- Forward Voltage
- 1.65V
- Power Dissipation
- 130W
- Radiation Hardening
- No
- Element Configuration
- Single
- Max Collector Current
- 30A
- Max Power Dissipation
- 130W
- Reverse Recovery Time
- 34ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -40°C