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IKW50N65RH5XKSA1
Infineon · TO-247
Infineon IKW50N65RH5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3
RoHSCompliant
- Manufacturer
- Infineon
- Categories
- Semiconductors · Discrete Semiconductors · Transistors · IGBTs
- Package / case
- TO-247
- Mounting style
- Through Hole
- Packaging
- Tube
- Voltage
- 650 V
- Temperature
- - 40 C – + 175 C
- Height
- 25.4mm
- Power Dissipation
- 305W
- Turn On Delay Time
- 22ns
- Turn Off Delay Time
- 180ns
- Max Operating Temperature
- 175°C
- Min Operating Temperature
- -40°C
- Continuous Collector Current
- 80A
- Max Junction Temperature (Tj)
- 175°C
- Collector Emitter Voltage (VCEO)
- 650V
Show 2 more specificationsShow fewer specifications
- Collector Emitter Breakdown Voltage
- 650V
- Collector Emitter Saturation Voltage
- 1.65V
Common questions about IKW50N65RH5XKSA1
- What is IKW50N65RH5XKSA1?
- IKW50N65RH5XKSA1 is Infineon IKW50N65RH5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3, manufactured by Infineon.
- Who manufactures IKW50N65RH5XKSA1?
- IKW50N65RH5XKSA1 is manufactured by Infineon.
- What package does IKW50N65RH5XKSA1 come in?
- IKW50N65RH5XKSA1 comes in a TO-247 package (Through Hole).
- Is IKW50N65RH5XKSA1 RoHS compliant?
- The RoHS status of IKW50N65RH5XKSA1 is: Compliant.
- Where can I buy IKW50N65RH5XKSA1?
- Send an RFQ to Makat and our AI agents source IKW50N65RH5XKSA1 across the whole supplier network, with verified offers inside 48 hours.